PART |
Description |
Maker |
SPP80N06S2-09 SPB80N06S2-09 |
Low Voltage MOSFETs - TO220/263; 80 A; 55 V; NL; 9.1 mOhm OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
SPB100N08S2L-07 SPP100N08S2L-07 |
Low Voltage MOSFETs - TO220/263; 100 A; 75V; LL; 6.8 mOhm OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
SPB100N08S2-07 SPP100N08S2-07 |
Low Voltage MOSFETs - TO220/263; 100 A; 75V; NL; 7.1 mOhm OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
SPP80N06S2-07 SPB80N06S2-07 |
Low Voltage MOSFETs - TO220/263/262; 80A; 55V; NL; 6.6mOhm N-Channel OptiMOS Power Transistor
|
Infineon
|
IPI06N03LA IPP06N03LA |
OptiMOS®2 - Power packages Low Voltage MOSFETs - OptiMOS? Power MOSFET, 25V, TO220, RDSon = 6.2mOhm, 50A, LL
|
Infineon
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
APT5014BLL APT5014SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗,高电压,N沟道增强模式的新一代功率MOSFET Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS 7 500V 35A 0.140 Ohm
|
Advanced Power Technology, Ltd.
|
SPB70N10L SPI70N10L SPP70N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=16mOhm, 70A, LL SIPMOS Power-Transistor Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=16mOhm, 70A, LL
|
INFINEON[Infineon Technologies AG]
|
KMB7D0DN40QB |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
KMB4D0N30SA |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
SPI80N03S2L-05 SPP80N03S2L-05 SPB80N03S2L-05 |
80 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA OptiMOS Power-Transistor 的OptiMOS功率晶体 Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 4.9mOhm, 80A, LL Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 5.2mOhm, 80A, LL
|
INFINEON[Infineon Technologies AG]
|